High-speed large-signal digital modulation of three-terminal low-threshold strained InGaAs/GaAs lasers

We present large-signal digital modulation of very low-threshold strained InGaAs/GaAs single quantum well (SQW) lasers with monolithically integrated intracavity modulators. The voltage controlled intracavity modulator was driven from a simple emitter-follower using a single NPN transistor. Modulation response mas obtained from dc to 1 Gbit/s with a modulation efficiency of 27% and modulation depth of nearly 100%. A bit-error-rate (BER) lower than 10/sup -11/ was measured at 1 Gbit/s with an input signal swing of only 110 mV. We demonstrate the suitability of these devices for ultrabroad-band optical interconnection applications.<
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