Design, optimization, and characterization of a low temperature RPECVD MOS gate stack process

Plasma-enhanced chemical vapor deposition (PECVD) allows film deposition in very short times and at low substrate temperatures. The use of remote plasma-enhanced chemical vapor deposition (RPECVD) to deposit an oxide insulator layer for a MOS gate stack structure within a single-wafer processing system is reported. The project background including government and industry support is presented. The design of the RPECVD chamber and optimization of deposition parameters are discussed. Characterization of the oxide quality through device testing is presented.<
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