Transient modeling of heterostructure optoelectronic switches

A 1-D simulation tool is developed for the transient analysis of four-layer double heterostructure optical switches. The simulated results for an InP/InGaAs PNPN switch show that the minority carrier lifetime could significantly alter the switching characteristics. The breakover voltage and holding current are strong functions of the minority carrier lifetime. The transient simulation results indicate that, although a fast turn-on time can be modeled, it leads to a slow turn-off response as this process is dominated by the recombination mechanism of the carriers.<
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