Metal-to-metal antifuses with very thin silicon dioxide films

Antifuse samples with very thin insulating oxide were fabricated using a technique of two-step PECVD oxide deposition. Dielectric strength as high as 13 MV/cm was obtained for our samples. Defect density and uniformity have been improved in this way. The on-state resistance of the programmed antifuses shows a stronger dependence on the oxide thickness when it was programmed at the lower current than when it was programmed at the higher current.<
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