High current p/p/sup +/-diamond Schottky diode

Epitaxial p-type Schottky diodes have been fabricated on p/sup +/-substrate. While the activation energy of the epitaxial layer conductivity is 390 meV, that of the substrate is only 50 meV. At forward bias the substrate conductivity dominates above 150/spl deg/C, leading for a 5/spl times/10/sup -5/ cm/sup 2/ area contact to a series resistance of 14 /spl Omega/ at 150/spl deg/C reducing to 8 /spl Omega/ at 500/spl deg/C. To our knowledge, this is the lowest series resistance reported so far for a diamond Schottky diode enabling extremely high current densities of 10/sup 3/ A/cm and a current rectification ratio at /spl plusmn/2 V of 10/sup 5/ making these diodes already attractive as high temperature rectifiers.<
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