Application of the difference subthreshold swing analysis to study generation of interface traps in MOS structures due to Fowler-Nordheim aging

Peaks in difference subthreshold swing relaxation defined as a function of the electron fluence yield generation cross sections and the densities of generated interface traps. The simple mathematical theorem, on which our measurements depend, has been proven experimentally. This technique has the advantage of being direct, fast and convenient; it is appropriate for the study of complex interface trap generation phenomena. The experiment shows that the interface traps generated consist of two kinds with different generation cross sections under high field stresses.<
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