Effect of lattice-mismatched growth on InAs/AlSb resonant-tunneling diodes

Nominally identical InAs/AlSb resonant-tunneling diodes are fabricated on InAs and GaAs substrates to ascertain the effect of dislocations on the resonant-tunneling process. Although the diode on the GaAs substrate had a much higher dislocation density, as evidenced by X-ray diffraction measurements, it displayed only a small decrease in peak-to-valley current ratio.<
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