Mapping the injection-lock band of semiconductor lasers

Detailed measurements of the lock band for injection-locked semiconductor lasers are discussed. The results are presented as fringe visibility versus frequency difference versus coupling. Fringe visibility is obtained by interfacing equal-intensity portions of the radiation from the master and slave lasers. A theoretical model that correlates well with the data is presented. Both theory and experiment amply demonstrate the influence of antiguiding on the structure of the injection-lock band.<
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