Ultra-low-threshold, high-bandwidth, very-low noise operation of 1.52 mu m GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD

GaInAsP/InP distributed-feedback (DFB) buried-ridge-structure laser diodes (BRS-LD) emitting at 1.52 mu m have been fabricated on material grown by two-step low-pressure metalorganic chemical-vapor deposition (LP-MOCVD), with a second-order corrugation on the GaInAsP guiding layer. The minimum CW threshold current of 5 mA is believed to be the lowest yet reported for DFB lasers at 1.5 mu m. Single-longitudinal-mode operation with a side mode suppression ratio of 40 dB from 20 to 100 degrees C with a temperature evolution of 0.64 AA/ degrees C has been obtained. At only 20 mA above threshold, a bandwidth of 9.6 GHz and a relative intensity noise (RIN) lower than -150 dB/Hz at 4 GHz have been measured.<
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