Suppression of reverse biased diode leakage by MeV ion implantation

MeV Ion implantation has proven useful for many applications, such as latch-up suppression, SER reduction, and buried layer formation. MeV ion implantation can also be used to form a minority carrier diffusion barrier to reduce reverse bias diode leakage, particularly at high temperatures. The reduction in diode leakage has applications in DRAMs, CCDs, etc. The use of a MeV implanted diffusion barrier improves the ability to scale DRAM cell capacitance.<
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