High linearity power X-band GaInP/GaAs heterojunction bipolar transistor

We report for the first time two-tone test results measured on a GaInP/GaAs HBT. A 2×400 μm
²
device delivered more than 1.3 W under one-tone testing at 7.5 GHz and output more than 1 W under two-tone. The corresponding intermodulation product is -14 dBc, and decreases to -21 and -36 dBc, respectively, at 3-dB and 10-dB back-off from the saturated two-tone output. These results demonstrate that GaInP/GaAs HBT's are suitable for microwave transmitter applications.