Porous polycrystalline silicon: a new material for MEMS

A new technique for the fabrication of thin patterned layers of porous polycrystalline silicon (polysilicon) and surface micromachined structures is presented. First, a multilayer structure of polysilicon between two layers of low-stress silicon nitride is prepared on a wafer of silicon. Electrochemical anodization with an external cathode takes place in an RF solution. A window in the outer nitride layer provides contact between the polysilicon and the HF solution; the polysilicon layer contacts the substrate through openings in the lower silicon nitride layer (remote from the upper windows). Porous polysilicon growth in the lateral direction is found at rates as high as 15 /spl mu/m min/sup -1/ in 12M (25%, wgt) HF to be controlled by surface-reaction kinetics. A change in morphology occurs when either the anodic potential is raised or the HF concentration is decreased, causing the polysilicon to be electropolished. The etch front advances proportionally to the square root of time as expected for a mass-transport-controlled process. Similar behavior is observed in HF anodic reactions of single-crystal silicon. Dissolution of the polysilicon layer is confirmed using profilometry and scanning electron microscopy. Enclosed cavities (chambers surrounded by porous plugs) are formed by alternating between pore formation and uniform dissolution. Porous polysilicon also forms over a broad-area layer of polycrystalline silicon that has been deposited without overcoating the silicon wafer with a thin film of silicon nitride. The resulting porous layer may be useful for gas-absorption purposes in ultrasonic sensors.<
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