Steady-state and transient analysis of submicron devices using energy balance and simplified hydrodynamic models

The differences between two widely used intermediate-level charge transport models are investigated. The origins of the models are reviewed, and mathematical relationships between the models are established. The practical consequences of the differences are investigated by comparing results obtained for several submicron structures. The predictions of the two models are shown to differ qualitatively, as well as quantitatively, for certain situations. An appendix summarizes the numerical techniques used to implement the models in a device simulator.<
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