A novel high-speed silicon bipolar transistor utilizing SEG and CLSEG

The concept and fabrication results are presented for a novel high-speed silicon bipolar transistor structure using selective epitaxy (SEG) and confined lateral growth (CLSEG) to form a double self-aligned single crystal contacted device. It provides significant improvements in the parasitics C/sub cb/ and C/sub cs/, and in the ECL gate delay.<
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