An LPE grown InP based optothyristor for power switching applications

This paper presents the results of a new InP based optothyristor for pulsed high power switching applications and compares them with a traditional InP photoconductive switch operating under similar conditions. The optothyristor utilized a semi-insulating InP wafer inserted between the two PN junctions in a conventional thyristor structure. We also determined the dynamic I-V characteristics and the di/dt turn-on parameter for this novel optothyristor. Using a 1.06 /spl mu/m YAG laser to trigger the optothyristor, we have achieved a 1200 V (4.8/spl times/10/sup 4/ V/cm) hold-off voltage with a maximum current of 61 A. The current rise time for device turn-on was measured to be consistently under 12 ns, and a maximum di/dt of 1.4/spl times/10/sup 10/ A/s was obtained.<
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