Microscopic noise modeling and macroscopic noise models: how good a connection? [FETs]

Based on the active line concept, a novel approach for the calculation of the high frequency noise performance of field effect transistors (FET) is proposed. By using a simple analytical theory, the FET small signal equivalent circuit as well as the macroscopic noise sources and their correlation are calculated for different two-port terminations. Values of the usual dimensionless noise parameters P, R, C, gate noise temperature T/sub g/ and drain noise temperature T/sub d/ are then given and discussed. By comparison with a more realistic numerical modeling of the noise performance, the validity of the analytical noise model is discussed. The validity of Pospieszalski's noise model and its relations with Pucel's one is emphasized.<
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