A model for 1/f noise in diffusion current based on surface recombination velocity fluctuations and insulator trapping

In this paper we present a new model for low frequency 1/f noise in semiconductor diodes. The model describes noise in diffusion current due to fluctuations in surface recombination velocity. The fluctuations in surface recombination velocity are in turn caused by insulator trapping. We examine the model's predictions for 1/f noise and its dependence on device geometry, temperature, surface potential, majority carrier concentration, and trap energy. Example calculations are performed for narrow band gap HgCdTe (E/sub G/=0.125 eV at 77 K), for which this mechanism should be relevant.<
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