The effects of fluorine passivation on polysilicon thin-film transistors

The fluorine implantation on polysilicon was found to improve the characteristics of polysilicon thin-film transistors (TFT's). The fluorine passivates the trap states within the polysilicon channel, as compared with the H/sub 2/-plasma passivation. The fluorine implantation passivates more uniformly both the band tail-states and midgap deep-state, while the H/sub 2/-plasma treatment is more effective to passivate deep states than tail states. A fluorine-implanted device can be further improved its performance if an H/sub 2/-plasma treatment is applied. In contrast to the H/sub 2/-plasma passivation, the fluorine passivation improves the device hot-carrier immunity. Combining the fluorine passivation and H/sub 2/-plasma passivation, a high performance TFT with a high hot-carrier immunity can be obtained.<
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