Monte Carlo simulation of noise in GaAs semiconductor devices

The Monte Carlo method has been used to calculate the noise in GaAs resistors where finite-size effects are important, being from 0.5 to 1.5 /spl mu/m in length. The results agree qualitatively with experimental noise measurements performed on similar devices. Monte Carlo noise calculations have also been conducted for Schottky barrier diodes. A method for conducting full-device Monte Carlo simulations of these diodes has been employed. Schottky barrier diodes with both 0.12 and 1.0 /spl mu/m epitaxial layers were modeled, and the calculated noise is in agreement with experiment throughout a wide range of bias voltages, both when shot noise and when excess noise predominate. Two different methods of calculating the noise current have been compared.<
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