In-situ measurement of crystalline-amorphous transition in Si substrates during ion implantation

In situ reflectometry during ion implantation of /sup 31/P/sup +/ onto single crystal Si substrates at implantation energies between 50 and 240 keV, and using a dose rate of 0.2 mu A/cm/sup 2/, has yielded new information, opening a new avenue for ion implantation research. The results show that the slope of the rapidly rising part of the reflectivity versus dose graph and the amorphization dose are increasing functions of implantation energy. The total work up to the amorphization dose and the work required for a phase change are calculated from the experimental data.<
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