Semi-permanent effects induced by an ionizing pulse in a MOS structure: experimental and theoretical study

The authors present an experimental and theoretical study of semi-permanent effects induced by an ionizing radiation pulse in an MOS transistor. Threshold voltage variation with time is studied for different applied gate bias voltages. The results presented indicate that the modeling of the time dependence response of an MOS transistor under an ionizing pulse of high dose add dose rate did not follow the pair separation fraction of the literature (see J. M. Benedetto and H. E. Boesch, Jr. 1986). The hypothesis of a generated photocurrent in bulk oxide as the origin of the field collapse and a new phenomenon for separating the generated pairs could explain the apparent independence of the initial shift from the gate voltage.<
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