Comparison of DMOS/IGBT-compatible high-voltage termination structures and passivation techniques

Single and multiple field plates are considered in conjunction with field-limiting rings and junction terminal extension (JTE) junction terminations with and without an additional SIPOS passivation. This comparison is done for shallow p-n junctions on n-type substrates doped to 1-2*10/sup 14/ cm/sup -3/ for 500- or 1000-V devices, respectively. The conclusions obtained from two-dimensional numerical simulations are checked experimentally. The best results have been obtained using a JTE structure with SIPOS passivation.<
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