Simulation of temperature and bias dependencies of beta and V/sub TO/ of GaAs MESFET devices

A DC and temperature-nonlinear GaAs MESFET device model is presented. It offers improved accuracy over existing models by simulating the bias dependency of the device transconductance ( beta ) and pinch-off point (V/sub TO/) parameters. The effect of these bias dependencies becomes more important as the temperature departs from room temperature. Expressions for simulating the temperature dependency of V/sub TO/ and beta are presented and provide improved accuracy over existing techniques. The model effectively couples the bias and temperature dependency of the devices.<
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