20 GHz high power high efficiency HEMT module

The development of a high-gain, high-power, high-efficiency K-band MIC (microwave integrated circuit) power module using four 1.6-mm pseudomorphic InGaAs HEMT (high electron mobility transistor) devices is reported. Power output of 3.2 W with 10 dB gain and 35% power-added efficiency at 3-dB compression was obtained at 20 GHz. The 1-dB bandwidth is 1.7 GHz. The greatly improved power gain and efficiency offer several design advantages in terms of higher SSPA (solid-state power amplifier) efficiency, fewer stages and modules required, and the attendant improved reliability for onboard application at 20 GHz.<
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