Hot carrier effects in n-channel polycrystalline silicon thin-film transistors: a correlation between off-current and transconductance variations

The application of bias-stresses with high source-drain voltage and different gate voltages in polycrystalline thin-film transistors modifies the transconductance as well as the off current. These effects have been explained in terms of hot-holes injection into the gate insulator causing the formation of trap centers in the oxide and interface states near the drain.<
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