Magneto-resistive elements-an alternative to floating gate technology

Magnetoresistive elements have previously been fabricated and tested for storage of data. Due to the nonvolatile property of these elements they can be used to replace floating gate storage cells. A programmable logic array (PLA) using on-chip magnetoresistive elements is simulated and its layout shown to illustrate the applicability of these elements. The die size for the 6*16*4 PLA is 2000 mu m*2000 mu m with 2- mu m technology. The PLA has a delay of 20 ns during normal operation. Programming time is 20 ns/cross point, and power up time is 1 mu s.<
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