Fabrication of GaAlAs/GaAs gain-coupled distributed feedback lasers using the nature of MBE

Molecular beam epitaxy (MBE) regrowth on a corrugated surface is improved dramatically using a novel technique by which not only a clean surface can be obtained but also the shape of grating can be precisely controlled. A GaAlAs/GaAs multi-quantum well gain-coupled distributed feedback (DFB) laser with an absorptive grating is fabricated all by MBE for the first time. DFB mode oscillation within a range of at least 80/spl deg/C is achieved. Stable single longitudinal mode oscillation is maintained up to 20 mW.<
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