Reoxidized nitrided oxides as gate dielectrics for high temperature integrated sensor MOS devices

It is shown that reoxidized nitrided oxides can offer both increased resistance to generation of interface states and insulator charge buildup due to bias-temperature stress for gate fields from 1-4 MV/cm and temperatures from 100-300 degrees C. Preliminary indications show that nitrided oxides may offer increased resistance to accelerated destructive breakdown at high temperature. The processing time and temperature conditions used as clearly not desirable for VLSI MOSFET processes. They do, however, demonstrate substantial promise for development of a high-temperature gate insulator process.<
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