Two-dimensional DC and transient analysis of a SiGe-base heterojunction bipolar device in an ECL buffer circuit

The authors report DC and transient analysis of a SiGe-base heterojunction bipolar device in an ECL buffer circuit using a modified PISCES program. As confirmed by published data, the modified PISCES program provides a good prediction on the f/sub T/ for the SiGe-base heterojunction bipolar devices. Based on the PISCES results, the ECL buffer using the BJT devices with germanium only provides a less than 10% shorter fall time as compared to the case without it although the f/sub T/ is 2* faster.<>