Accumulation-type vs. inversion-type of an ultra-thin SIO PMOS device operating at 300 K and 77 K: subthreshold behavior and pull-up switching performance of a CMOS inverter

This paper presents two-dimensional simulation study on the accumulation-type vs. the inversion-type of an ultra-thin SOI PMOS device operating at 300 K and 77 K in terms of its subthreshold behavior and pull-up switching performance of a CMOS inverter, using low-temperature PISCES.<>