Power semiconductor devices for sub-microsecond laser pulse generation

The authors analyze available devices which are anticipated to have a high potential for submicrosecond pulse generation. Highly integrated reverse-conducting thyristors (RCT) and gate turn-off (GTO) thyristors are established as devices of choice. Their switching properties are characterized and the best suited applications conditions are described. A laboratory submicrosecond pulser has been built for both devices and used to compare the RCT and GTO. For practical reasons it is found that the RCT has advantages over the present-day GTO. The future ideal power semiconductor switch is seen as a combination of both concepts.<
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