Quantum-confined Stark effect modulators at 1.06 mu m on GaAs

Electroabsorption modulation is achieved at or near a wavelength of 1.06 mu m with In/sub x/Al/sub y/Ga/sub 1-x-y/As/In/sub x/Ga/sub 1-x/As multiple-quantum-well (MQW) structures grown on GaAs substrates. The lattice mismatch (close to 2%) between the MQW and the substrate is accommodated by a compositional-step-graded buffer array. A dislocation density of less than 10/sup 7//cm/sup 2/ is estimated for the MQW region. For 80-to-100 AA well widths, a maximum electroabsorption coefficient of 8000 cm/sup -1/ with an applied voltage of 15 V is obtained.<
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