Realization of tensile strain on GaAs substrates for polarization independent optical modulation

The quantum-confined Stark effect of tensile-strained GaAs-InAlAs quantum wells grown on top of a related nonpseudomorphic InAlAs grid layer on GaAs substrates was studied. It was demonstrated by waveguide absorption measurements that polarization-independent optical modulation in tensile-strained GaAs wells is possible in a wavelength range of around 870 nm.<
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