Temperature-dependent study of the interfacial resistances in polysilicon-emitter contacts

From a comparison of the functional dependences of the measured interfacial resistance with those simulated by a rigorous numerical computer calculation, a triangular-shaped potential barrier is inferred for those interfacial layers having an RCA-clean surface treatment. It is conjectured that the triangular shape is linked to the dopant pile-up at this interfacial layer.<
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