Resonant cavity light emitting diode and detector using epitaxial liftoff

Epitaxial liftoff (ELO) is used in a novel manner to form arrays of vertical resonant cavity light emitting diodes (RCLED's) using two metal mirrors. The epitaxial layers consist of an InP/InGaAs p-i-n structure. Electroluminescence from the vertically emitting resonant cavity is measured CW at room temperature to have a spectral width of 9 meV in contrast to a photoluminescence spectral width of 51 meV for the unprocessed layers. The structure behaves as a resonant detector under reverse bias. Cavities formed in this manner will find wide application in surface emitting and detecting arrays and spatial light modulators, and as a means of studying the physics of spontaneous emission.<
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