A proposed method for dynamic fitting of MOS model parameters

A method for optimization of MOS model parameters is introduced. The method is based upon dynamically fitting the measured frequency response of a reconfigurable ring oscillator. The ring oscillator contains two added switching transistors and two loading capacitors. By controlling the switching transistors, the capacitive load of the inverters and thus the oscillation frequency can be varied. The simulated and the measured frequencies are compared and the derived average error is minimized. Sequential iterations using combined mathematical methods are applied to the procedure. Simplifications are introduced in order to shorten the computational time. The effectiveness of the method on improving the accuracy of simulation is demonstrated with numerical examples.<
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