Low temperature proton induced upsets in NMOS resistive load static RAM

Proton-induced upset measurements were performed on some NMOS resistive-load static RAMs for temperatures down to -125 degrees C. Results show that the upset cross section strongly depends on temperature as well as the incident beam flux. SPICE modeling for the critical charge versus temperature is not sufficient to explain the data. An explanation is provided that describes multiple subcritical linear-energy-transfer particle strikes within RAM cell integration times that cause upsets.<
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