Comparison of threshold transient upset levels induced by flash X-rays and pulsed lasers

The use of pulsed laser testing as a method of evaluating the transient-radiation upset thresholds of integrated circuits is discussed. By comparing upset levels using a pulsed laser with those obtained using a flash X-ray that has long been an accepted transient-radiation simulator, it is shown that the laser can be used as a reliable source for 100% screening and also as an efficient development tool. Differences in the responses of the two sources are pointed out, and it is shown that upset levels of CMOS SRAMs using the two sources are in good agreement when these factors are taken into account. Results for both wafer level and packaged parts testing are presented.<
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