A new and accurate circuit-modelling approach for the power-diode

A class of bipolar power semiconductor models for time-saving large-topology circuit simulation is presented. The ambipolar diffusion equation is solved numerically including local effects such as carrier-carrier scattering and Auger recombination processes. Thereby, temperature dependent, algebraic expressions for scattering and recombination processes replace any widely used, unphysical effective parameters (high-injection lifetime, mean carrier concentration, average mobility). Thus, device simulation features are used to simulate large circuits, including power semiconductors, effectively, which is impossible with the device simulation itself.<
>