The application of deep level transient spectroscopy to the measurement of radiation-induced interface state spectra

The technique of constant capacitance, deep level transient spectroscopy (CC-DLTS) was used to measure the energy distribution of the Co-60-induced interface-state concentration, D, in MOS capacitors fabricated on both p- and n-type Si. In the Sandia baseline and Mod B test chips examined, D depends on the bias during irradiation and the postirradiation anneal. Annealing at 80 degrees C causes the growth of deep states centered near 0.4 eV below the conduction band in n-type samples. For p-type Si, the postanneal spectrum is dominated by shallow interface states.<
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