Time-dependent interface trap effects in MOS devices

A fast charge-pumping technique was used to measure the radiation-induced buildup of interface traps in MOS structures after exposure to short-pulse irradiation. A strong dependence of the time scale of the late-time buildup (t >10 ms) on the oxide electric field at very early times (10 mu s to 0.5 ms) is explained in terms of a positive-ion-drift model. The early-time buildup (t<10 ms) component is examined in detail, and evidence is presented that the early buildup is controlled by transport of holes to the SiO/sub 2//Si interface.<
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