A new MOSFET output conductance measurement technique

A new technique is presented for accurate measurement of the output conductance of a metal-oxide semiconductor field effect transistor (MOSFET). This technique allows the measurement of output conductance down to the sub mu S region with an accuracy of better than 1%. Measurements in this range of output conductance are plagued by stray capacitances and noise. The new technique effectively combats these sources of error. The above-mentioned accuracy is maintained even when the susceptance due to the stray capacitance is as much as five times the conductance being measured.<
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