Characteristics of In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HEMT's with n-and p-channel doping

The effects of modified n- and p-channel doping on the characteristics of 0.25- mu m In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HEMTs are studied. The introduction of n- or p-channel doping (in addition to the modulation doping in the donor supply layer) is intended to modify the potential well and carrier distribution in the device channel for improved device performance. Self-consistent Monte Carlo simulations and experimental results both show considerably reduced output conductance and increased transconductance for the HEMT using modified p-channel doping compared with those for the HEMT with a modified n-channel. The performance enhancement for the HEMT with modified p-channel doping is attributed to improved carrier confinement in the potential well of the channel and reduced spread in the channel electric field profile.<
>