A self-aligned lateral bipolar transistor realized on SIMOX-material

Lateral bipolar transistors, compatible with a CMOS process on SOI, have been fabricated on high quality SIMOX material. A self-aligned nitride spacer technique is used for base width definition and for emitter alignment. Current gains of 40 and high collector-emitter breakdown voltages have been obtained for transistors with base widths of 4000 AA.<
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