Simulation and fabrication of submicron channel length DMOS transistors for analog applications

The use of an asymmetric MOS structure for superior analog circuit performance is considered. Results from the fabrication of 1- mu m-gate length DMOS transistors show increases of up to 1.9 in transconductance, 10 in output resistance, and 8 in intrinsic gain when compared to NMOS structures of similar gate length and threshold voltage. Substrate current is also reduced by up to a factor of 10. This represents the first reported results of submicron channel length DMOS transistors. The standard 7 degrees implantation angle has significant impact on DMOS fabrication and is shown to produce a usable asymmetric DMOS from an otherwise symmetric DMOS. An optimal implant energy and diffusion time are shown to exist for DMOS enhancement region formation. Two-dimensional process and device simulators have proved necessary to develop the DMOS process, as well as to qualitatively explain body effect reduction and threshold voltage determination. The DMOS process has successfully yielded experimental circuits including a single ended operational amplifier of folded cascode technology and a 101-state ring oscillator.<
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