Injection current model of a MOS diode under charge-sharing mode readout operation

Based on the Shockley diffusion theory, an injection current model for the metal-oxide-semiconductor (MOS) charge injection device (CID) under charge-sharing mode readout scheme is proposed. It is found that the relation of the injection current and the surface potential follows the ideal diode equation. A photocurrent method is developed to verify the model and the extracted ideality factor is very close to unity. An equivalent SPICE model of the MOS diode is derived and the simulated transient readout response fits the experimental data quite well.<
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