Determination of the effective channel thickness of the MESFETs based on transconductance parameter beta measurement

A method for extracting the effective channel thickness of MESFETs fabricated in fully ion-implanted processes is proposed. This method is based on the measurement of the transconductance parameter beta . Since the expression for beta includes the velocity saturation effect, the extracted effective channel thickness is comparable to simulation results. This method allows convenient extraction of the effective channel thickness of fully implanted MESFETs.<
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