A new method for the simultaneous determination of the surface-carrier mobility and the metal-semiconductor work-function difference in MOS transistors

The method consists of simple measurements of the drain conductance in the linear region of output characteristics for a series of MOS transistors with gate oxides of different thicknesses. Provided the effective mobility does not depend on oxide thickness, both the mobility and the work-function difference can be determined without the need of determining the threshold voltage. The reduced work-function difference phi */sub MS/ can be determined even if substrate impurity concentration is unknown. A practical verification of the method is done by reanalysis of experimental data in the literature.<
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