A power MOSFET model based on a lumped-charge approach

The lumped-charge approach offers a compact, physical power MOSFET model which is equivalent in complexity to the SPICE MOSFET model (level 1) used for low voltage devices. The surface charge is assumed to be lumped into nodes calculated using standard delta depletion (body region) or moderate depletion (drain region) approximations. An equivalent circuit for the MOSFET model can be derived from the interaction of the internal lumped-charges with the three external terminal voltages. The model is implemented in the SABER simulator. Simulated results are in good agreement with measured results.<
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