A novel scaled-down oxygen-implanted polysilicon resistor for future static RAMs

A scaled-down high resistor (1 mu m or less in length) for future static RAMs was realized by using slow arsenic diffusion in oxygen-implanted polysilicon, by which arsenic is partially doped to form a polysilicon interconnection layer. The current-voltage characteristics of the oxygen-doped polysilicon resistors were almost linear, and the marked decrease in resistance for higher applied voltage, observed in undoped polysilicon, was not found. The field-effect modulation of the resistance in the oxygen-doped polysilicon was much less than that of an undoped one.<
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